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"Gating current studies suggest that a slow component of hERG gating charge, Q on, underlies S4 voltage sensor movement with a time constant of ~ 50 ms at +10 mV which is slightly faster than channel activation, and a V (1/2) that is about 20 mV hyperpolarized compared to the conductance-voltage (G-V) relationship in both WT and S631A inactivation removed channels XREF_BIBR."